Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.048
Abstract: Abstract We have performed a detailed investigation of the molecular beam epitaxy of AlGaN epilayers on AlN template on sapphire substrate. The effects of various growth parameters, including nitrogen flow rate, and Al and Ga… read more here.
Keywords: molecular beam; epitaxy characterization; al0 6ga0; beam epitaxy ... See more keywords