Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
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DOI: 10.1149/2.0071908jss
Abstract: As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this… read more here.
Keywords: temperature; group semiconductors; low temperature; semiconductors use ... See more keywords