Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate
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DOI: 10.1002/admi.202400978
Abstract: Although GaN has successfully epitaxy growth on 4H‐SiC substrate, its kinetics mechanism, and how to control the morphology and polarity of epitaxial GaN have not been revealed yet. Herein, by investigating the epitaxial process of… read more here.
Keywords: growth sic; sic substrate; growth; kinetics mechanism ... See more keywords
Highly oriented crystalline thin film with high electroluminescence performance fabricated by weak epitaxy growth
Sign Up to like & getrecommendations! Published in 2020 at "Organic Electronics"
DOI: 10.1016/j.orgel.2020.105806
Abstract: Abstract Efficient control on the growth of organic crystalline films is crucial for developing organic electroluminescent devices. Herein, a highly crystalline thin film of a blue-light-emitting material, 1,2-diphenyl-1H-phenanthro[9,10-d]imidazole (PPI) derivative, 1,4-bis(1-phenyl-1H-phenanthro[9,10-d]imidazol-2-yl)benzene (ρ-DPPI), has been achieved… read more here.
Keywords: epitaxy growth; thin film; crystalline thin; weak epitaxy ... See more keywords
Molecular beam epitaxy growth of AlAs1−x Bi x
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DOI: 10.1088/1361-6641/aacf38
Abstract: High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain… read more here.
Keywords: molecular beam; growth alas1; epitaxy growth; beam epitaxy ... See more keywords