Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene
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DOI: 10.1002/adfm.201905056
Abstract: Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal‐oxide‐semiconductor circuits, is a prerequisite for next‐generation high‐performance electronics and optoelectronics. However, the direct epitaxy of single‐crystalline GaN… read more here.
Keywords: 100 substrate; crystalline gan; crystalline; epitaxy single ... See more keywords