The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System
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DOI: 10.1007/s13391-018-0022-5
Abstract: We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and… read more here.
Keywords: low temperature; system; temperature; epitaxy strained ... See more keywords