Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory
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DOI: 10.1021/acsanm.8b00918
Abstract: Memory stacks for charge trapping cells have been produced exploiting Al-doped HfO2, Al2O3, and SiO2 made by atomic layer deposition. The fabricated stacks show superior stability and electrical ch... read more here.
Keywords: oxide thickness; equivalent oxide; sub equivalent; hfo2 ... See more keywords