Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization
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DOI: 10.1063/5.0150647
Abstract: In this paper, an effective equivalent modeling technique has been proposed to describe small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after proton radiation, which is composed of an artificial neural network and equivalent-circuit… read more here.
Keywords: based hemts; small signal; inp based; model ... See more keywords