Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3212540
Abstract: Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape. In this study, we defined the curvature of… read more here.
Keywords: erase operation; program; nand; channel wave ... See more keywords