Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202203888
Abstract: Tunnel field‐effect transistors (TFETs) are a promising candidate for low‐power applications owing to their steep subthreshold swing of sub‐60 mV per decade. For silicon‐ or germanium‐based TFETs, the drive current is low due to the… read more here.
Keywords: negative differential; esaki diodes; gesn; gesn esaki ... See more keywords
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2834825
Abstract: Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating… read more here.
Keywords: tails tunneling; esaki diodes; band tails; discrepancy ... See more keywords
High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3086086
Abstract: InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm2 are demonstrated. Negative differential resistance (NDR) is achieved from 300 to 4 K, showing that band-to-band tunneling (BTBT) is the dominant transport… read more here.
Keywords: gasb heterojunction; inas gasb; band; esaki diodes ... See more keywords