ESD Behavior of Tunnel FET Devices
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DOI: 10.1109/ted.2016.2630079
Abstract: For the first time, we present the electrostatic discharge (ESD) behavior of grounded gate tunnel FET (ggTFET) with detailed physical insight into the device operation, 3-D filamentation and failure under ESD stress conditions. Current as… read more here.
Keywords: esd behavior; tunnel fet; devices esd; device ... See more keywords
On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology Implications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2877693
Abstract: In this paper, for the first time, the record high-performance top-gated graphene technology platform is used for electrostatic discharge (ESD) physics exploration while investigating the implications of various design and technology options. Impact of diffusive… read more here.
Keywords: esd behavior; physical insights; technology; behavior large ... See more keywords