Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.10.026
Abstract: Abstract We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness… read more here.
Keywords: protection; gdnmos; esd protection; soi ... See more keywords
Bidirectional silicon‐controlled rectifier for advanced ESD protection applications
Sign Up to like & getrecommendations! Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2018.6686
Abstract: In this Letter, an enhanced bidirectional modified lateral silicon-controlled rectifier (EBMLSCR) is proposed for advanced dual-directional electrostatic discharge (ESD) protection applications. The ESD characteristics of the novel EBMLSCR and conventional bidirectional modified lateral silicon-controlled rectifier… read more here.
Keywords: silicon controlled; controlled rectifier; protection applications; esd protection ... See more keywords
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits
Sign Up to like & getrecommendations! Published in 2025 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/adc033
Abstract: Two series of electrostatic discharge (ESD) protection devices, based on the N-type and P-type Low Voltage Triggering Silicon-Controlled Rectifier (LVTSCR) structure, were designed and fabricated in a 0.25 μm Bipolar-CMOS-DMOS process. The same trigger circuit,… read more here.
Keywords: protection devices; trigger; trigger circuit; esd protection ... See more keywords
Design of LDO Regulator With High Reliability ESD Protection Circuit Using Analog Current Switch Structure for 5-V Applications
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2023.3267162
Abstract: The modern electronic device should be able to provide stable voltage and current under a variety of conditions. The LDO regulator used in the electronic device is a system that requires various voltages and load… read more here.
Keywords: high reliability; circuit; ldo regulator; voltage ... See more keywords
Pad-Based CDM ESD Protection Methods Are Faulty
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3022743
Abstract: Charged device model (CDM) electrostatic discharge (ESD) protection remains a huge challenge for integrated circuit (IC) reliability designs. The “internal-oriented” CDM model and the “external-oriented” human body model (HBM) describe fundamentally different ESD phenomena. Through… read more here.
Keywords: cdm esd; protection; pad based; esd protection ... See more keywords
Low-C ESD Protection Design With Dual Resistor-Triggered SCRs in CMOS Technology
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2018.2817389
Abstract: The electrostatic discharge (ESD) protection design with low parasitic capacitance seen at I/O pad is needed for high-frequency applications. Conventional ESD protection designs with dual diodes or dual stacked diodes have been used for gigahertz… read more here.
Keywords: tex math; esd protection; protection; inline formula ... See more keywords
ESD Protection Design With Diode-Triggered Quad-SCR for Separated Power Domains
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2903209
Abstract: To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18- $ {\mu }\text{m}$ 1.8-V/3.3-V CMOS process. Since… read more here.
Keywords: protection; protection design; power domains; esd protection ... See more keywords
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.3022897
Abstract: Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency. This study proposes a novel dual-direction MOSFET ESD protection device with a high holding voltage.… read more here.
Keywords: high holding; esd; holding voltage; esd protection ... See more keywords
Non-Traditional Operational Mechanisms of NbOx-Based Threshold Switching Devices Used on on-Chip ESD Protection
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2025.3624917
Abstract: Protecting integrated circuits against electrostatic discharge (ESD) remains a persistent challenge within the semiconductor industry, garnering significant attention from the research and industrial sectors. To effectively discharge substantial ESD current away from sensitive devices, on-chip… read more here.
Keywords: chip esd; traditional operational; non traditional; chip ... See more keywords
A New SCR Structure With High Holding Voltage and Low ON-Resistance for 5-V Applications
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2963994
Abstract: This article proposes a new silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection device suitable for 5-V applications. The proposed ESD protection device has an additional n-p-n parasitic bipolar transistor that provides an extremely short ESD… read more here.
Keywords: holding voltage; esd protection; voltage; protection device ... See more keywords
All-Directional Silicon-Controlled Rectifier With Improved Voltage Clamping Capability for FinFET ESD Protection
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3359175
Abstract: The narrow design window in FinFET process has put forward very strict demands on the clamping voltage of input–output (I/O) protection devices in rail-based electrostatic discharge (ESD) protection networks. In this article, a novel all-directional… read more here.
Keywords: protection; voltage; controlled rectifier; silicon controlled ... See more keywords