Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.10.026
Abstract: Abstract We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness… read more here.
Keywords: protection; gdnmos; esd protection; soi ... See more keywords
Bidirectional silicon‐controlled rectifier for advanced ESD protection applications
Sign Up to like & getrecommendations! Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2018.6686
Abstract: In this Letter, an enhanced bidirectional modified lateral silicon-controlled rectifier (EBMLSCR) is proposed for advanced dual-directional electrostatic discharge (ESD) protection applications. The ESD characteristics of the novel EBMLSCR and conventional bidirectional modified lateral silicon-controlled rectifier… read more here.
Keywords: silicon controlled; controlled rectifier; protection applications; esd protection ... See more keywords
Design of LDO Regulator With High Reliability ESD Protection Circuit Using Analog Current Switch Structure for 5-V Applications
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2023.3267162
Abstract: The modern electronic device should be able to provide stable voltage and current under a variety of conditions. The LDO regulator used in the electronic device is a system that requires various voltages and load… read more here.
Keywords: high reliability; circuit; ldo regulator; voltage ... See more keywords
Pad-Based CDM ESD Protection Methods Are Faulty
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3022743
Abstract: Charged device model (CDM) electrostatic discharge (ESD) protection remains a huge challenge for integrated circuit (IC) reliability designs. The “internal-oriented” CDM model and the “external-oriented” human body model (HBM) describe fundamentally different ESD phenomena. Through… read more here.
Keywords: cdm esd; protection; pad based; esd protection ... See more keywords
Low-C ESD Protection Design With Dual Resistor-Triggered SCRs in CMOS Technology
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2018.2817389
Abstract: The electrostatic discharge (ESD) protection design with low parasitic capacitance seen at I/O pad is needed for high-frequency applications. Conventional ESD protection designs with dual diodes or dual stacked diodes have been used for gigahertz… read more here.
Keywords: tex math; esd protection; protection; inline formula ... See more keywords
ESD Protection Design With Diode-Triggered Quad-SCR for Separated Power Domains
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2903209
Abstract: To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18- $ {\mu }\text{m}$ 1.8-V/3.3-V CMOS process. Since… read more here.
Keywords: protection; protection design; power domains; esd protection ... See more keywords
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.3022897
Abstract: Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency. This study proposes a novel dual-direction MOSFET ESD protection device with a high holding voltage.… read more here.
Keywords: high holding; esd; holding voltage; esd protection ... See more keywords
A New SCR Structure With High Holding Voltage and Low ON-Resistance for 5-V Applications
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2963994
Abstract: This article proposes a new silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection device suitable for 5-V applications. The proposed ESD protection device has an additional n-p-n parasitic bipolar transistor that provides an extremely short ESD… read more here.
Keywords: holding voltage; esd protection; voltage; protection device ... See more keywords
π-Shape ESD Protection Design for Multi-Gbps High-Speed Circuits in CMOS Technology
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16072562
Abstract: CMOS integrated circuits are vulnerable to electrostatic discharge (ESD); therefore, ESD protection circuits are needed. On-chip ESD protection is important for both component-level and system-level ESD protection. In this work, on-chip ESD protection circuits for… read more here.
Keywords: high speed; esd protection; protection; multi gbps ... See more keywords
Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14030600
Abstract: The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures. In this paper, the mixed TCAD model… read more here.
Keywords: circuit; protection circuit; esd protection; model ... See more keywords
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Sign Up to like & getrecommendations! Published in 2018 at "Micromachines"
DOI: 10.3390/mi9120657
Abstract: Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection… read more here.
Keywords: drain regions; esd protection; source drain; tfet ... See more keywords