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Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab75a6
Abstract: N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall…
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Keywords:
ga2o3 single;
degenerate doping;
concentration;
single crystals ... See more keywords