Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si
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DOI: 10.1016/j.jcrysgro.2018.02.036
Abstract: Abstract Thick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers, as templates for the epitaxy of III-V and GeSn-based heterostructures and so on. Perfecting their crystalline quality would enable to… read more here.
Keywords: production; assessment growth; etch back; strain ... See more keywords