Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma
Sign Up to like & getrecommendations! Published in 2021 at "Materials"
DOI: 10.3390/ma14113005
Abstract: In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology… read more here.
Keywords: virtual metrology; etch profile; etch; development ... See more keywords
Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12223963
Abstract: Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between… read more here.
Keywords: etch profile; edge area; wafer edge; wafer ... See more keywords