Etch-stop process for precisely controlling the vertical cavity length of GaN-based devices
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105265
Abstract: Abstract In this study, an etch-stop process was developed using inductively coupled plasma reactive-ion etching for precisely controlling the vertical cavity length of GaN-based devices, such as vertical-cavity surface-emitting lasers (VCSELs) and VCSEL 2D arrays.… read more here.
Keywords: etch stop; cavity; stop process; vertical cavity ... See more keywords
Boron and high-k dielectrics: Possible fourth etch stop colors for multipattern optical lithography processing
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4974920
Abstract: In a companion article, the etch characteristics of materials within the Si-C-O-N-H system were surveyed using two common fluorinated plasma etches used to etch SiO2 interlayer dielectrics and SiN:H etch stop layers (CHF3 and CF4/O2,… read more here.
Keywords: high dielectrics; etch stop; optical lithography; etch ... See more keywords
Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15103503
Abstract: In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved… read more here.
Keywords: al0 5gan; layer; stop layer; etch stop ... See more keywords