Articles with "etched fin" as a keyword



Photo from wikipedia

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Sign Up to like & get
recommendations!
Published in 2023 at "Micromachines"

DOI: 10.3390/mi14050931

Abstract: In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which… read more here.

Keywords: fin gate; algan gan; band applications; linearity ... See more keywords