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Published in 2023 at "Micromachines"
DOI: 10.3390/mi14050931
Abstract: In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which…
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Keywords:
fin gate;
algan gan;
band applications;
linearity ... See more keywords