Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes
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DOI: 10.1109/led.2021.3079901
Abstract: Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that… read more here.
Keywords: etched regrown; continuously grown; carrier diffusion; diffusion lengths ... See more keywords