High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13040589
Abstract: A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl3/SF6 inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a… read more here.
Keywords: icp; gan algan; etching gan; high selectivity ... See more keywords
Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation
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DOI: 10.7567/apex.10.086502
Abstract: Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation… read more here.
Keywords: etching gan; irradiation; plasma; surface ... See more keywords