Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
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DOI: 10.3390/ma16051890
Abstract: Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching… read more here.
Keywords: anisotropic etching; quantum dots; thin films; etching ingan ... See more keywords