Effects of Electrochemical Etching on InP HEMT Fabrication
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Semiconductor Manufacturing"
DOI: 10.1109/tsm.2019.2940320
Abstract: Optimum device performance in terms of noise and gain of AlInAs/GaInAs/InP High Electron Mobility Transistors (HEMTs) requires minimizing the contact resistance ${R} _{C}$ . In several HEMT fabrication steps in device manufacturing it is common… read more here.
Keywords: hemt fabrication; etching inp; inp hemt; effects electrochemical ... See more keywords
Investigations of the Anodic Porous Etching of n-InP in HCl by Atomic Absorption and X-ray Photoelectron Spectroscopies
Sign Up to like & getrecommendations! Published in 2018 at "Journal of The Electrochemical Society"
DOI: 10.1149/2.0181804jes
Abstract: The electrochemical porous etching of n-InP in 1 M HCl has been investigated by monitoring the mass of In 3+ released during and after the anodic polarization. The study has been performed on both crystal-oriented… read more here.
Keywords: inp hcl; etching inp; porous etching; ray photoelectron ... See more keywords
The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications
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DOI: 10.3390/mi12121535
Abstract: Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is… read more here.
Keywords: icp etching; optics; inp ingaasp; based plasma ... See more keywords