Selective Wet and Dry Etching of NiO over β-Ga2O3
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DOI: 10.1149/2162-8777/ac94a0
Abstract: Patterning of NiO/Ga2O3 heterojunctions requires development of selective wet and dry etch processes. Solutions of 1:4 HNO3:H2O exhibited measurable etch rates for NiO above 40°C and activation energy for wet etching of 172.9 kJ.mol-1 (41.3… read more here.
Keywords: selective wet; wet dry; dry etching; etching nio ... See more keywords