Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
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DOI: 10.1134/s1063782617120028
Abstract: Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via… read more here.
Keywords: etching sige; sige usage; selective etching; silicon ... See more keywords