Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5119033
Abstract: Atomic Layer Etching is performed on SiO2 samples cooled down to a very low temperature (below −100 °C). C4F8 gas flow is injected and molecules physisorb on the cooled surfaces. Etching is then carried out using… read more here.
Keywords: etching sio2; c4f8; microscopy; atomic layer ... See more keywords
Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4971171
Abstract: This work demonstrated a process for the atomic-scale etching of SiO2 films, consisting of alternating nanometer-thick fluorocarbon film deposition with O2 plasma irradiation in a capacitively coupled plasma reactor. Ar plasma etching after fluorocarbon film… read more here.
Keywords: deposition; fluorocarbon film; plasma; etching sio2 ... See more keywords
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abdcd9
Abstract: 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and MOS capacitors were fabricated by the following procedures: H2 etching, SiO2 deposition, and nitridation, and their electrical characteristics were evaluated. Substantially low interface state densities (4–6 × 1010 cm−2… read more here.
Keywords: sio2 deposition; sic 0001; etching sio2; nitridation ... See more keywords