Bright red electroluminescence from Al2O3/Eu2O3 nanolaminate films fabricated by atomic layer deposition on silicon
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DOI: 10.1016/j.scriptamat.2021.113750
Abstract: Abstract Silicon-based metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on the Al2O3/Eu2O3 nanolaminate films are fabricated by atomic layer deposition, which emit red electroluminescence (EL) peaking at 613 nm with the external quantum efficiency of 5.47% and power… read more here.
Keywords: nanolaminate films; al2o3 eu2o3; atomic layer; eu2o3 nanolaminate ... See more keywords