Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures
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DOI: 10.1109/jeds.2018.2826978
Abstract: A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be… read more here.
Keywords: voltage; sub sub; hfo sub; sub ... See more keywords