Research of Single-Event Burnout in Floating Field Ring Termination of Power MOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2703833
Abstract: This paper presents the 2-D numerical simulation results of the single-event burnout (SEB) in the floating field ring (FFR) termination of a power MOSFET for the first time. We investigate the SEB triggering mechanism and… read more here.
Keywords: floating field; event burnout; field ring; single event ... See more keywords
Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2872170
Abstract: This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based… read more here.
Keywords: carrier lifetime; event burnout; jbs; single event ... See more keywords
Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2933026
Abstract: In this article, the performance and triggering mechanism of the single-event burnout (SEB) of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2-D numerical simulations. The novel N+ island buffer 4H-SiC TG MOSFET… read more here.
Keywords: buffer; single event; structure; island buffer ... See more keywords
Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3015718
Abstract: In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the… read more here.
Keywords: devices single; hardening method; single event; mosfet ... See more keywords
Sensitivity and Mechanism Study of Single-Event Burnout in 4H-SiC Devices With FLRs Termination
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3270132
Abstract: The 4H-silicon carbide (SiC) junction barrier Schottky with field limiting rings (FLRs-JBS) termination was fabricated and analyzed to evaluate its radiation tolerance of the single-event burnout (SEB). Experimental and simulation results show that the SiC/SiO2/metal… read more here.
Keywords: event burnout; event; area; termination ... See more keywords
Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14051028
Abstract: Power MOSFETs are found to be very vulnerable to single-event burnout (SEB) in space irradiation environments, and the military components generally require that devices could operate reliably as the temperature varies from 218 K to… read more here.
Keywords: event burnout; temperature dependence; temperature; single event ... See more keywords