Sign Up to like & get
recommendations!
1
Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2775234
Abstract: Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms…
read more here.
Keywords:
event mechanisms;
finfet technologies;
angular effects;
effects single ... See more keywords