Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
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DOI: 10.1109/tns.2018.2875451
Abstract: We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by… read more here.
Keywords: influence single; event multiple; single event; ionizing dose ... See more keywords