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Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3206401
Abstract: In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation…
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Keywords:
event transient;
bulk mosfet;
tcad simulation;
temperature ... See more keywords
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Published in 2017 at "IEEE Transactions on Computers"
DOI: 10.1109/tc.2017.2702174
Abstract: Bloom filters have been used to reduce the delay in networking and computing applications when a set membership check is to be applied. Error sources can affect the behavior of Bloom filters resulting in a…
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Keywords:
bloom;
bloom filter;
single event;
event transient ... See more keywords
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Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2783935
Abstract: Heavy-ion experiments demonstrated that reducing the distance between nMOS transistor and n-well can reduce N-hit (i.e., hit nMOS transistor) single-event transient (SET) pulsewidth. This principle can be applied for radiation-harden-by-design standard cell design without any…
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Keywords:
nmos transistor;
transistor;
single event;
event transient ... See more keywords
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Published in 2022 at "Symmetry"
DOI: 10.3390/sym14040788
Abstract: A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes. In this…
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Keywords:
single event;
voltage controlled;
event transient;
voltage ... See more keywords