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Published in 2024 at "AIP Advances"
DOI: 10.1063/5.0184659
Abstract: With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention. This paper investigates single-event transient (SET) caused by the proton direct ionization on…
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Keywords:
cmos image;
single event;
proton;
event transient ... See more keywords
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Published in 2024 at "Physica Scripta"
DOI: 10.1088/1402-4896/ad2ace
Abstract: This work presents the characteristics of the single event transient (SET) induced by a single heavy ion in the inverse mode NPN-SiGe HBT simulated with the Silvaco TCAD toolkit. The designed SiGe HBT technology structure…
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Keywords:
single event;
heavy ion;
sige hbt;
device ... See more keywords
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Published in 2024 at "Journal of Instrumentation"
DOI: 10.1088/1748-0221/19/08/p08026
Abstract: This study investigates the temperature dependence of single event transient (SET) effects in silicon germanium heterojunction bipolar transistors (SiGe HBTs). Using Silvaco TCAD simulations, we analyze the influence of linear energy transfer (LET), emitter bias…
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Keywords:
temperature;
sige hbt;
single event;
event transient ... See more keywords
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Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3206401
Abstract: In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation…
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Keywords:
event transient;
bulk mosfet;
tcad simulation;
temperature ... See more keywords
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Published in 2017 at "IEEE Transactions on Computers"
DOI: 10.1109/tc.2017.2702174
Abstract: Bloom filters have been used to reduce the delay in networking and computing applications when a set membership check is to be applied. Error sources can affect the behavior of Bloom filters resulting in a…
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Keywords:
bloom;
bloom filter;
single event;
event transient ... See more keywords
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Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2783935
Abstract: Heavy-ion experiments demonstrated that reducing the distance between nMOS transistor and n-well can reduce N-hit (i.e., hit nMOS transistor) single-event transient (SET) pulsewidth. This principle can be applied for radiation-harden-by-design standard cell design without any…
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Keywords:
nmos transistor;
transistor;
single event;
event transient ... See more keywords
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Published in 2024 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2024.3381932
Abstract: Bandgap is a critical block for numerous electronic systems, which provides stable voltage reference for multiple submodules over process, voltage supply, and temperature (PVT) fluctuations. This article first proposes a radiation-hardened-by-design (RHBD) technique, which can…
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Keywords:
single event;
reference;
voltage;
bandgap ... See more keywords
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Published in 2022 at "Symmetry"
DOI: 10.3390/sym14040788
Abstract: A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes. In this…
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Keywords:
single event;
voltage controlled;
event transient;
voltage ... See more keywords