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   Articles with "event transients" as a keyword



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A DC-to-8.5 GHz 32 : 1 Analog Multiplexer for On-Chip Continuous-Time Probing of Single-Event Transients in a 65-nm CMOS

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recommendations! Published in 2017 at "IEEE Transactions on Circuits and Systems II: Express Briefs"

DOI: 10.1109/tcsii.2016.2567781

Abstract: A multiplexer circuit that is capable of accessing 32 internal nodes for the continuous-time probing of signal waveforms is proposed. A chip has been fabricated with eight multiplexer instances and used in experiments for monitoring… read more here.

Keywords: time probing; event transients; continuous time; single event ... See more keywords
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Single Event Transients in Sub-10nm SOI MuGFETs Due to Heavy-Ion Irradiation

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recommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"

DOI: 10.1109/tdmr.2020.2985029

Abstract: We compare and report in this work heavy-ion irradiation induced single event transients (SETs) in sub-10nm node SOI multiple gate FETs with the help of calibrated 3-D TCAD simulations. Our analysis includes the nanosheet FET… read more here.

Keywords: heavy ion; single event; ion; event transients ... See more keywords
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p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

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recommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2017.2780120

Abstract: The benefits of using p-n-p silicon–germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole… read more here.

Keywords: event transients; mitigation single; sige; based switches ... See more keywords
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Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

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recommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2018.2877412

Abstract: Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured… read more here.

Keywords: black phosphorus; phosphorus mosfets; single event; induced single ... See more keywords
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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

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recommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2019.2950864

Abstract: A comparison of heavy-ion-induced single-event transients (SETs) in silicon–germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a reduction of sensitive volume of $\approx… read more here.

Keywords: comparison; single event; soi; sige hbts ... See more keywords