Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies
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DOI: 10.1109/tns.2021.3065267
Abstract: Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in… read more here.
Keywords: bulk finfet; evidence interface; finfet technologies; interface trap ... See more keywords