Examining Different Regimes of Ionization-Induced Damage in GaN Through Atomistic Simulations.
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DOI: 10.1002/smll.202102235
Abstract: The widespread adoption of gGaN in radiation-hard semiconductor devices relies on a comprehensive understanding of its response to strongly ionizing radiation. Despite being widely acclaimed for its high radiation resistance, the exact effects induced by… read more here.
Keywords: electronic energy; ionization; examining different; energy loss ... See more keywords