Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications
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DOI: 10.1038/s41598-017-17985-9
Abstract: This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages… read more here.
Keywords: excellent rectifying; high temperature; rectifying properties; properties sic ... See more keywords