Exceptional silicon surface passivation by an ONO dielectric stack
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DOI: 10.1016/j.solmat.2018.05.061
Abstract: Abstract Immeasurably low surface recombination of crystalline-silicon wafers is demonstrated with an oxide-nitride-oxide (ONO) corona charged dielectric stack. We detail experimental variations to each layer of the dielectric stack to establish a procedure which provides… read more here.
Keywords: passivation; dielectric stack; exceptional silicon; surface ... See more keywords