Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals
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DOI: 10.1063/1.5117350
Abstract: The expansion/contraction behavior of single Shockley-type stacking faults (1SSFs) in 4H-SiC crystals is investigated by using an electronic energy model. The model takes into account several factors that were not considered in the previous models… read more here.
Keywords: carrier density; model; carrier; excess carrier ... See more keywords