Impeding Exciton–Exciton Annihilation in Monolayer WS2 by Laser Irradiation
Sign Up to like & getrecommendations! Published in 2018 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b00249
Abstract: Monolayer (1L) transition metal dichalcogenides (TMDs) are two-dimensional direct-bandgap semiconductors with promising applications of quantum light emitters. Recent studies have shown that intrinsically low quantum yields (QYs) of 1L-TMDs can be greatly improved by chemical… read more here.
Keywords: exciton annihilation; monolayer; exciton; exciton exciton ... See more keywords
Twist-angle-controlled neutral exciton annihilation in WS2 homostructures.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr00195k
Abstract: Exciton-exciton annihilation (EEA), as typical nonradiative recombination, plays an unpopular role in semiconductors. The nonradiative process significantly reduces the quantum yield of photoluminescence, which substantially inhibits the maximum efficiency of optoelectronic devices. Recently, laser irradiation,… read more here.
Keywords: ws2 homostructures; twist angle; exciton annihilation; angle ... See more keywords
Exciton-exciton annihilation in hBN
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5090218
Abstract: Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the exciton… read more here.
Keywords: annihilation hbn; exciton exciton; exciton annihilation;