Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM
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DOI: 10.1109/ted.2023.3321017
Abstract: This study delves deeper into the high-frequency (HF) behavior of state-of-the-art sub-THz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55 nm BiCMOS process technology from STMicroelectronics. Using measurement data, calibrated TCAD simulations, and compact… read more here.
Keywords: compact modeling; hicum; sige hbts; exploring compact ... See more keywords