Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.146016
Abstract: Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role… read more here.
Keywords: gan heterostructures; extended defects; surface photovoltage; inxga1 gan ... See more keywords
Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4976696
Abstract: From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II–VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the… read more here.
Keywords: space charge; microscopy; extended defects; charge ... See more keywords
Mechanism of Na accumulation at extended defects in Si from first-principles
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5003385
Abstract: Sodium (Na) impurities in silicon solar cells are considered to play an important role in potential-induced degradation (PID), a significant cause of solar cell degradation and failure. Shorting due to Na accumulation at extended defects… read more here.
Keywords: energy; mechanism accumulation; extended defects; accumulation extended ... See more keywords
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
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DOI: 10.1063/1.5046827
Abstract: In0.53Ga0.47As p + n diodes with different densities of extended defects have been analyzed by detailed structural and electrical characterization. The defects have been introduced during Metal-Organic Vapor Phase Epitaxy (MOVPE) growth by using a lattice-mismatched layer… read more here.
Keywords: localized states; in0 53ga0; bandlike localized; extended defects ... See more keywords
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
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DOI: 10.1063/1.5132300
Abstract: Emerging wide bandgap semiconductor devices such as the ones built with SiC have the potential to revolutionize the power electronics industry through faster switching speeds, lower losses, and higher blocking voltages, which are superior to… read more here.
Keywords: genesis evolution; evolution; extended defects; evolution extended ... See more keywords
Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
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DOI: 10.7567/apex.10.036601
Abstract: We study the correlation between crystal quality and electrical transport in 4H-SiC by micro-photoluminescence and laser-beam-induced photocurrent measurements. A focused HeCd laser at 325 nm has been employed to simultaneously measure, with a spatial resolution… read more here.
Keywords: investigated photoinduced; extended defects; defects sic; sic investigated ... See more keywords