On Preserving-Excitation Properties of Kreisselmeier’s Regressor Extension Scheme
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Automatic Control"
DOI: 10.1109/tac.2022.3172175
Abstract: In this article, we consider the excitation preservation problem of Kreisselmeier’s regressor extension scheme. We analyze this problem within the context of the dynamic regressor extension and mixing procedure. The well-known qualitative result is that… read more here.
Keywords: extension scheme; regressor extension; excitation; kreisselmeier regressor ... See more keywords
A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13050868
Abstract: This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integrated circuits, transistors in the bottom… read more here.
Keywords: extension scheme; scheme; source drain; novel source ... See more keywords