Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5004268
Abstract: The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities… read more here.
Keywords: state; modulation doping; level; external loss ... See more keywords