Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN
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DOI: 10.1063/1.5111664
Abstract: Si doping of (Al,Ga)N layers grown by metalorganic chemical vapor deposition induces an inclination of threading dislocations (TDs). This inclination leads to a change of the extra half-plane size of edge and mixed type dislocations.… read more here.
Keywords: inclination; half plane; extra half; tensile strain ... See more keywords