An accurate method to extract thermal resistance of GaN-on-Si HEMTs
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DOI: 10.1063/5.0141198
Abstract: An accurate method to extract the thermal resistance (RTH) of GaN-on-Si high electron mobility transistors (HEMTs) is proposed. It is shown that by pulsing the substrate, instead of drain or gate as done in the… read more here.
Keywords: thermal resistance; method; accurate method; method extract ... See more keywords