Challenges to extracting spatial information about double P dopants in Si from STM images
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DOI: 10.1038/s41598-024-67903-z
Abstract: The design and implementation of dopant-based silicon nanoscale devices rely heavily on knowing precisely the locations of phosphorous dopants in their host crystal. One potential solution combines scanning tunneling microscopy (STM) imaging with atomistic tight-binding… read more here.
Keywords: dopant; extracting spatial; information double; challenges extracting ... See more keywords