An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM
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DOI: 10.1109/tvlsi.2019.2907594
Abstract: A previously unrecognized vertical-extrinsic device in advanced 7-nm FinFET SRAM structures is identified and characterized for the first time. The ON-current for this vertical-extrinsic device is modulated by gate bias and exhibits a process-dependent threshold… read more here.
Keywords: finfet sram; leakage; mechanism; extrinsic device ... See more keywords