Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology.
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DOI: 10.1364/oe.455513
Abstract: This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS… read more here.
Keywords: 110 cmos; avalanche diodes; single photon; photon avalanche ... See more keywords