Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC
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DOI: 10.1109/ted.2017.2658685
Abstract: Temperature influence on the device behavior has been carried out on AlGaAs/InGaAs/GaAs-based pseudomorphic high-electron mobility transistor fabricated in multilayer 3-D monolithic microwave integrated circuits technology over multibias operation condition. The multibias thermal effect on the… read more here.
Keywords: fabricated multilayer; signal parameters; large signal; thermal influence ... See more keywords