Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors
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DOI: 10.1016/j.scriptamat.2018.06.040
Abstract: Abstract A wafer-scale distributed Bragg reflector (DBR), which consists of perfectly lattice-matched polar (0001) GaN and nanoporous GaN layers, was fabricated by electrochemical etching method in an oxalic acid solution, presenting high-reflectivity (>90%) and wide… read more here.
Keywords: distributed bragg; fabrication annealing; nanoporous gan; wafer scale ... See more keywords