Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment
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DOI: 10.1039/d0ce01489c
Abstract: A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC. Etch pits formed on the C-face of 4H-SiC by H2–O2 plasma etching were observed using a… read more here.
Keywords: microwave plasma; plasma etching; face; face sic ... See more keywords
Controllable growth of P-type graphene on the boron ion-implanted Si-face of SiC (0001)
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DOI: 10.1063/1.5124418
Abstract: Realizing the reliable modulation of the carrier type and density in graphene is a challenging task, especially for epitaxial graphene (EG) grown in situ on SiC via thermal decomposition. In this process, doping is seldom… read more here.
Keywords: sic 0001; graphene; face; type ... See more keywords
A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
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DOI: 10.1088/1361-6463/ab2859
Abstract: We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that th ... read more here.
Keywords: oriented sic; face; comparative study; face sic ... See more keywords
Formation of graphene atop a Si adlayer on the C-face of SiC
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DOI: 10.1103/physrevmaterials.3.084006
Abstract: The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed,… read more here.
Keywords: face; atop adlayer; graphene; adlayer face ... See more keywords