Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
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DOI: 10.1155/2019/5231983
Abstract: In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950… read more here.
Keywords: contact mechanism; faced sic; sic substrate; ohmic contact ... See more keywords