Using both faces of polar semiconductor wafers for functional devices
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DOI: 10.1038/s41586-024-07983-z
Abstract: Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide-bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along a unique crystal axis1. This makes the two surfaces of the… read more here.
Keywords: semiconductor; faces polar; face; cation ... See more keywords